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BC857S Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BC857S
Description  PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BC857S Datasheet(HTML) 2 Page - Siemens Semiconductor Group

   
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BC 857S
Semiconductor Group
May-12-1998
2
Electrical Characteristics at
TA=25°C, unless otherwise specified
Parameter
Symbol
Unit
Values
min.
typ.
max.
DC Characteristics per Transistor
V
45
V(BR)CEO
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
-
-
Collector-base breakdown voltage
IC = 10 µA, IB = 0
V(BR)CBO
-
-
50
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
V(BR)CES
50
-
-
-
V(BR)EBO
5
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
-
Collector cutoff current
VCB = 30 V, IE = 0
ICBO
-
-
nA
15
µA
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
ICBO
-
5
-
DC current gain 1)
IC = 10 µA, VCE = 5 V
IC = 2 mA, VCE = 5 V
-
200
250
290
hFE
-
630
-
mV
-
-
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
75
250
300
650
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
700
850
-
-
-
-
VBEsat
600
-
650
-
750
820
VBE(ON)
Base-emitter voltage 1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
1) Pulse test: t < 300
µs; D < 2%


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