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BC856-BC860 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BC856-BC860
Description  PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BC856-BC860 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

   
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BC 856 ... BC 860
Semiconductor Group
3
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
V
Collector-emitter breakdown voltage
IC = 10 mA
BC 856
BC 857, BC 860
BC 858, BC 859
V(BR)CE0
65
45
30
nA
µA
Collector cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
ICB0
1
15
4
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
IC = 10
µA
BC 856
BC 857, BC 860
BC 858, BC 859
V(BR)CB0
80
50
30
Emitter-base breakdown voltage
IE = 1
µA
V(BR)EB0
5––
mV
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
75
250
300
650
DC current gain
IC = 10
µA, VCE = 5 V
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
IC = 2 mA, VCE = 5 V
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
hFE
125
220
420
140
250
480
180
290
520
250
475
800
Base-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
700
850
Collector-emitter breakdown voltage
IC = 10
µA, VBE = 0
BC 856
BC 857, BC 860
BC 858, BC 859
V(BR)CES
80
50
30
Base-emitter voltage
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(on)
600
650
750
820
1)Pulse test: t
300 µs, D = 2 %.


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