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BC636 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BC636
Description  PNP Silicon AF Transistors (High current gain High collector current)
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BC636 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

  BC636 Datasheet HTML 1Page - Siemens Semiconductor Group BC636 Datasheet HTML 2Page - Siemens Semiconductor Group BC636 Datasheet HTML 3Page - Siemens Semiconductor Group BC636 Datasheet HTML 4Page - Siemens Semiconductor Group BC636 Datasheet HTML 5Page - Siemens Semiconductor Group  
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Semiconductor Group
2
BC 636
… BC 640
Maximum Ratings
Parameter
Values
Unit
Collector-emitter voltage
V
Peak collector current
Collector current
A
Junction temperature
˚C
Total power dissipation, TC = 90 ˚C1)
W
Storage temperature range
Collector-base voltage
Thermal Resistance
Junction - ambient1)
156
K/W
60
1
1.5
0.8 (1)
150
– 65 … + 150
Emitter-base voltage
Base current
mA
100
Junction - case2)
55
45
80
60
45
100
BC 638
BC 636
BC 640
5
Peak base current
200
Symbol
VCE0
ICM
IC
Tj
Ptot
Tstg
VCB0
Rth JA
VEB0
IB
Rth JC
IBM
1)
If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm x 10 mm large copper area
for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
2)
Mounted on Al heat sink 15 mm
× 25 mm × 0.5 mm.


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