TSHA5203 datasheet(3/5 Pages) VISHAY

Part #	TSHA5203

Description	Infrared Emitting Diode, 875 nm, GaAlAs

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 81019

For technical questions, contact: emittertechsupport@vishay.com

www.vishay.com

Rev. 1.9, 29-Jun-09

3

TSHA5200, TSHA5201, TSHA5202, TSHA5203

Infrared Emitting Diode, 875 nm,

GaAlAs

Vishay Semiconductors

Note

Tamb = 25 °C, unless otherwise specified

BASIC CHARACTERISTICS

Tamb = 25 °C, unless otherwise specified

Fig. 3 - Pulse Forward Current vs. Pulse Duration

Fig. 4 - Forward Current vs. Forward Voltage

Fig. 5 - Relative Forward Voltage vs. Ambient Temperature

Fig. 6 - Radiant Intensity vs. Forward Current

TYPE DEDICATED CHARACTERISTICS

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 1 A, tp = 100 µs

TSHA5200

VF

2.8

3.5

V

TSHA5201

VF

2.8

3.5

V

TSHA5202

VF

2.8

3.5

V

TSHA5203

VF

2.8

3.5

V

Radiant intensity

IF = 100 mA, tp = 20 µs

TSHA5200

Ie

25

40

125

mW/sr

TSHA5201

Ie

30

50

125

mW/sr

TSHA5202

Ie

36

60

125

mW/sr

TSHA5203

Ie

50

65

125

mW/sr

IF = 1 A, tp = 100 µs

TSHA5200

Ie

200

330

mW/sr

TSHA5201

Ie

260

400

mW/sr

TSHA5202

Ie

330

460

mW/sr

TSHA5203

Ie

400

530

mW/sr

Radiant power

IF = 100 mA, tp = 20 µs

TSHA5200

φ

e

22

mW

TSHA5201

φ

e

23

mW

TSHA5202

φ

e

24

mW

TSHA5203

φ

e

25

mW

t p - Pulse Duration (ms)

94 8003

100

101

10-1

100

102

10-2

t p/T= 0.01

IFSM = 2.5 A (single pause)

0.05

0.1

0.2

0.5

VF - Forward Voltage (V)

94 8005

101

102

103

104

t

p = 100 µs

t

p/T= 0.001

4

3

2

1

0

0.7

0.8

0.9

1.0

1.1

1.2

94 7990

T

amb - Ambient Temperature (°C)

100

80

60

40

20

0

I

F = 10 mA

IF - Forward Current (mA)

94 8006

103

101

102

104

100

1

10

100

1000

TSHA 5200

TSHA 5201

TSHA 5202

TSHA 5203

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Similar Description - TSHA5203

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	TSHA5200	107Kb / 5P	Infrared Emitting Diode, 875 nm, GaAlAs Rev. 2.0, 24-Aug-11
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	TSHA6500	113Kb / 5P	Infrared Emitting Diode, 875 nm, GaAlAs 01-Jan-2022
	TSHA5500	105Kb / 5P	Infrared Emitting Diode, 875 nm, GaAlAs Rev. 1.9, 24-Aug-11
	TSHA6200	115Kb / 6P	Infrared Emitting Diode, 875 nm, GaAlAs Rev. 1.8, 25-Jun-09
	TSHA4400	119Kb / 5P	Infrared Emitting Diode, 875 nm, GaAlAs Rev. 1.8, 15-Sep-14

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