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TEMD1000 Datasheet(PDF) 2 Page - Vishay Siliconix |
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TEMD1000 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page TEMD1000, TEMD1020, TEMD1030, TEMD1040 www.vishay.com Vishay Semiconductors Rev. 2.4, 09-Aug-11 2 Document Number: 81564 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Fig. 3 - Reverse Light Current vs. Irradiance Fig. 4 - Diode Capacitance vs. Reverse Voltage BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 50 mA VF 11.3 V Breakdown voltage IR = 100 μA, E = 0 V(BR) 60 V Reverse dark current VR = 10 V, E = 0 Iro 110 nA Diode capacitance VR = 5 V, f = 1 MHz, E = 0 CD 1.8 pF Reverse light current Ee = 1 mW/cm2, = 870 nm, VR = 5 V Ira 6.0 10 13.0 μA Ee = 1 mW/cm2, = 950 nm, VR = 5 V Ira 12 μA Temperature coefficient of Ira VR = 5 V, = 870 nm, TKIra 0.2 %/K Absolute spectral sensitivity VR = 5 V, = 870 nm s( )0.60 A/W VR = 5 V, = 950 nm s( )0.55 A/W Angle of half sensitivity ± 15 deg Wavelength of peak sensitivity p 940 nm Range of spectral bandwidth 0.5 790 to 1050 nm Rise time VR = 10 V, RL = 50 , = 820 nm tr 4ns Fall time VR = 10 V, RL = 50 , = 820 nm tf 4ns 20 1 10 100 1000 T amb - Ambient Temperature (°C) 94 8427 V R = 10 V 100 80 60 40 0.6 0.8 1.0 1.2 1.4 T amb - Ambient Temperature (°C) 94 8416 V R = 5 V λ = 950 nm 0 100 80 60 40 20 0.1 1.0 10 100 0.01 E e - Irradiance (mW/cm²) 16055 V CE = 5 V λ = 950 nm 10 1 0.1 0 2 4 6 8 0.1 V R- Reverse Voltage (V) 94 8430 E = 0 f = 1 MHz 100 10 1 |
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