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BC327 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BC327
Description  PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BC327 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

   
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Semiconductor Group
3
BC 327
BC 328
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
DC current gain1)
IC = 100 mA; VCE = 1 V
BC 327/16; BC 328/16
BC 327/25; BC 328/25
BC 327/40; BC 328/40
IC = 300 mA; VCE = 1 V
BC 327/16; BC 328/16
BC 327/25; BC 328/25
BC 327/40; BC 328/40
hFE
100
160
250
60
100
170
160
250
350
250
400
630
V
Collector-emitter breakdown voltage
IC = 10 mA
BC 327
BC 328
V(BR)CE0
45
25
nA
nA
µA
µA
Collector cutoff current
VCB = 25 V
BC 328
VCB = 45 V
BC 327
VCB = 25 V, TA = 150 ˚C
BC 328
VCB = 45 V, TA = 150 ˚C
BC 327
ICB0
100
100
10
10
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
IC = 100
µA
BC 327
BC 328
V(BR)CB0
50
30
Emitter-base breakdown voltage
IE = 10
µA
V(BR)EB0
5––
V
Collector-emitter saturation voltage1)
IC = 500 mA; IB = 50 mA
VCEsat
0.7
Base-emitter saturation voltage1)
IC = 500 mA; IB = 50 mA
VBEsat
––2
nA
Emitter cutoff current
VEB = 4 V
IEB0
100
1)
Pulse test: t
300 µs, D 2%.


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