T1670P datasheet(2/4 Pages) VISHAY

Part #	T1670P

Description	Silicon PIN Photodiode

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Manufacturer	VISHAY [Vishay Siliconix]

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For technical questions, contact: optochipsupport@vishay.com

Document Number: 81999

2

Rev. 1.4, 23-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

T1670P

Vishay Semiconductors

Silicon PIN Photodiode

Notes

• The measurements are based on samples of die which are mounted on a TO-header without resin coating

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Diode Capacitance vs. Reverse Voltage

Fig. 2 - Relative Spectral Sensitivity vs. Wavelength

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Breakdown voltage

IR = 100 μA, E = 0

V(BR)

16

V

Reverse dark current

VR = 10 V, E = 0

Iro

0.1

2

nA

Diode capacitance

VR = 3 V, f = 1 MHz, E = 0

CD

28

pF

Reverse light current

EV = 100 lx, CIE illuminant A,

VR = 5 V

Ira

138

nA

Angle of half sensitivity



± 60

deg

Wavelength of peak sensitivity



p

560

nm

Range of spectral bandwidth



0.5

390 to 800

nm

Rise time

VR = 5 V, RL = 50 ,

 = 515 nm

tr

100

ns

Fall time

VR = 5 V, RL = 50 ,

 = 515 nm

tf

100

ns

20094

0

10

20

30

40

50

60

70

010

20

30

V

R - Reverse Voltage (V)

E

0 = 0

f = 1 MHz

21741

λ - Wavelength (nm)

0.0

0.2

0.4

0.6

0.8

1.0

400

500

600

700

800

900 1000 1100

MECHANICAL DIMENSIONS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Length of chip edge (x-direction)

Lx

0.72

mm

Length of chip edge (y-direction)

Ly

0.72

mm

Sensitive area

AS

0.27

mm2

Wafer diameter

D

100

mm

Die height

H

0.265

0.28

0.295

mm

Bond pad anode

x * y

0.125 x 0.11

mm2

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