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T1670P Datasheet(PDF) 2 Page - Vishay Siliconix |
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T1670P Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page www.vishay.com For technical questions, contact: optochipsupport@vishay.com Document Number: 81999 2 Rev. 1.4, 23-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 T1670P Vishay Semiconductors Silicon PIN Photodiode Notes • The measurements are based on samples of die which are mounted on a TO-header without resin coating BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Diode Capacitance vs. Reverse Voltage Fig. 2 - Relative Spectral Sensitivity vs. Wavelength BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Breakdown voltage IR = 100 μA, E = 0 V(BR) 16 V Reverse dark current VR = 10 V, E = 0 Iro 0.1 2 nA Diode capacitance VR = 3 V, f = 1 MHz, E = 0 CD 28 pF Reverse light current EV = 100 lx, CIE illuminant A, VR = 5 V Ira 138 nA Angle of half sensitivity ± 60 deg Wavelength of peak sensitivity p 560 nm Range of spectral bandwidth 0.5 390 to 800 nm Rise time VR = 5 V, RL = 50 , = 515 nm tr 100 ns Fall time VR = 5 V, RL = 50 , = 515 nm tf 100 ns 20094 0 10 20 30 40 50 60 70 010 20 30 V R - Reverse Voltage (V) E 0 = 0 f = 1 MHz 21741 λ - Wavelength (nm) 0.0 0.2 0.4 0.6 0.8 1.0 400 500 600 700 800 900 1000 1100 MECHANICAL DIMENSIONS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Length of chip edge (x-direction) Lx 0.72 mm Length of chip edge (y-direction) Ly 0.72 mm Sensitive area AS 0.27 mm2 Wafer diameter D 100 mm Die height H 0.265 0.28 0.295 mm Bond pad anode x * y 0.125 x 0.11 mm2 |
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