SUD50N04-8M8P-4GE3 datasheet(4/9 Pages) VISHAY

Part #	SUD50N04-8M8P-4GE3

Description	N-Channel 40-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 68647

S10-0109-Rev. B, 18-Jan-10

Vishay Siliconix

SUD50N04-8m8P

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Single Pulse, Junction-to-Ambient

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

0

25

50

75

100

125

150

TJ -Junction Temperature (°C)

ID =20A

VGS =10 V

VGS =4.5 V

0.005

0.010

0.015

0.020

0.025

0.030

02

4

6

8

10

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID =7.2 A

0

100

200

300

400

500

0.0001

0.001

0.01

0.1

1

10

Time (s)

TA = 25 °C

Source-Drain Diode Forward Voltage

Threshold Voltage

Safe Operating Area, Junction-to-Case

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD -Source-to-Drain Voltage (V)

1

0.01

0.001

0.1

10

100

TJ = 25 °C

TJ = 150 °C

TJ = - 55 °C

- 1.0

- 0.6

- 0.2

0.2

0.6

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

ID =1mA

0.01

0.1

1

10

100

1000

0.1

1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

10 ms,

100 ms, DC

1ms

TC = 25 °C

Single Pulse

100 µs

BVDSS

Limited byRDS(on)*

10 µs

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