BBY58-03W datasheet(2/3 Pages) SIEMENS

Part #	BBY58-03W

Description	Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 3 page

BBY 58-03W

Semiconductor Group

Au -03-1998

2

Electrical Characteristics at

TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC characteristics

Reverse current

VR = 8 V

IR

-

1

nA

Reverse current

VR = 8 V, TA = 65 °C

IR

-

100

AC characteristics

pF

Diode capacitance

VR = 1 V, f = 1 MHz

VR = 2 V, f = 1 MHz

VR = 3 V, f = 1 MHz

VR = 4 V, f = 1 MHz

17.5

-

5.5

19.3

-

6.6

18.3

12.35

8.6

6

CT

Capacitance ratio

VR = 1 V, VR = 3 V, f = 1 MHz

CT1/CT3

2.15

-

Capacitance ratio

VR = 1 V, VR = 4 V, f = 1 MHz

CT1/CT4

3.05

3.3

2.8

Series resistance

VR = 1 V, f = 470 MHz

Ω

-

rs

-

0.25

Case capacitance

f = 1 MHz

0.09

pF

-

CC

nH

Series inductance chip to ground

Ls

-

0.6

-

Semiconductor Group

2

1998-11-01

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BBY58-03W Datasheet(PDF) 2 Page - Siemens Semiconductor Group

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