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BBY55-03W Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BBY55-03W
Description  Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BBY55-03W Datasheet(HTML) 2 Page - Siemens Semiconductor Group

   
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BBY 55-03W
Semiconductor Group
Apr-30-1998
2
Electrical Characteristics at
TA = 25°C, unless otherwise specified.
Parameter
Symbol
Unit
Values
min.
max.
typ.
DC characteristics
IR
-
-
Reverse current
VR = 15 V
3
nA
IR
-
-
100
Reverse current
VR = 15 V, TA = 65 °C
AC characteristics
Diode capacitance
VR = 2 V, f = 1 MHz
VR = 4 V, f = 1 MHz
VR = 10 V, f = 1 MHz
14
10
5.5
15
11
6
CT
16
12
6.5
pF
2
-
Capacitance ratio
VR = 2 V, VR = 10 V, f = 1 MHz
CT2/CT10
2.5
3
-
rs
0.35
0.15
Series resistance
VR = 5 V, f = 470 MHz
-
0.09
-
CC
Case capacitance
f = 1 MHz
pF
-
0.6
Series inductance
Ls
-
nH
Semiconductor Group
2
1998-11-01


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