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BBY53 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BBY53
Description  Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BBY53 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

   
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Semiconductor Group
2
Feb-04-1997
BBY 53
Electrical Characteristics at
TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
VR = 4 V, TA = 25 °C
VR = 4 V, TA = 65 °C
IR
-
-
-
-
200
10
nA
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
CT
1.85
4.8
2.4
5.3
3.1
5.8
pF
Capacitance ratio
VR = 1 V, VR = 3 V, f = 1 MHz
CT1/CT3
1.8
2.2
2.6
-
Series resistance
VR = 1 V, f = 1 GHz
rs
-
0.37
-
Case capacitance
f = 1 MHz
CC
-
0.12
-
pF
Series inductance chip to ground
Ls
-
2
-
nH


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