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SMMA511DJ Datasheet(PDF) 2 Page - Vishay Siliconix |
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SMMA511DJ Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 14 page www.vishay.com Document Number: 65281 2 S09-2019-Rev. B, 05-Oct-09 SMMA511DJ Vishay Siliconix New Product Notes a. Surface mounted on 1" x 1" FR4 board. b. Package limit is ± 4.5 A. c. t = 5 s. d. See Solder Profile ( www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 °C/W. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT TYP. MAX. TYP. MAX. Maximum Junction-to-Ambientb, f t ≤ 5 s RthJA 52 65 52 65 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 12.5 16 12.5 16 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA N-Ch 12 - - V VGS = 0 V, ID = - 250 µA P-Ch - 12 - - VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA N-Ch - 12 - mV/°C ID = - 250 µA P-Ch - - 7 - VGS(th) Temperature Coefficient ΔV GS(th)/TJ ID = 250 µA N-Ch - - 2.8 - ID = - 250 µA P-Ch - 2.1 - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.4 - 1 V VDS = VGS, ID = - 250 µA P-Ch - 0.4 - - 1 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V N-Ch - - ± 100 nA P-Ch - - ± 100 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 12 V N-Ch - - 1 µA VGS = 0 V VDS = - 12 V P-Ch - - - 1 VGS = 0 V VDS = 12 V, TJ = 55 °C N-Ch - - 10 VGS = 0 V VDS = - 12 V, TJ = 55 °C P-Ch - - - 10 On-State Drain Currenta ID(on) VGS = 4.5 V VDS ≥ 5 V N-Ch 15 - - A VGS = - 4.5 V VDS ≤ - 5 V P-Ch - 8 - - Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V ID = 4.2 A N-Ch - 0.033 0.040 Ω VGS = - 4.5 V ID = - 3.3 A P-Ch - 0.058 0.070 VGS = 2.5 V ID = 3.8 A N-Ch - 0.039 0.048 VGS = - 2.5 V ID = - 2.8 A P-Ch - 0.082 0.100 VGS = 1.8 V ID = 1.6 A N-Ch - 0.051 0.063 VGS = - 1.8 V ID = - 0.7 A P-Ch - 0.111 0.140 Forward Transconductancea gfs VDS = 10 V, ID = 4.2 A N-Ch - 13 - S VDS = - 10 V, ID = - 3.3 A P-Ch - 9 - Dynamicb Input Capacitance Ciss VGS = 0 V N-Channel VDS = 6 V, f = 1 MHz P-Channel VDS = - 6 V, f = 1 MHz N-Ch - 400 - pF P-Ch - 400 - Output Capacitance Coss N-Ch - 120 - P-Ch - 140 - Reverse Transfer Capacitance Crss N-Ch - 70 - P-Ch - 100 - |
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