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SMMA511DJ Datasheet(PDF) 2 Page - Vishay Siliconix

Part # SMMA511DJ
Description  N- and P-Channel 12 V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SMMA511DJ Datasheet(HTML) 2 Page - Vishay Siliconix

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www.vishay.com
Document Number: 65281
2
S09-2019-Rev. B, 05-Oct-09
SMMA511DJ
Vishay Siliconix
New Product
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. Package limit is ± 4.5 A.
c. t = 5 s.
d. See Solder Profile (
www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
UNIT
TYP.
MAX.
TYP.
MAX.
Maximum Junction-to-Ambientb, f
t
≤ 5 s
RthJA
52
65
52
65
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
12.5
16
12.5
16
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
N-Ch
12
-
-
V
VGS = 0 V, ID = - 250 µA
P-Ch
- 12
-
-
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
N-Ch
-
12
-
mV/°C
ID = - 250 µA
P-Ch
-
- 7
-
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
ID = 250 µA
N-Ch
-
- 2.8
-
ID = - 250 µA
P-Ch
-
2.1
-
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
N-Ch
0.4
-
1
V
VDS = VGS, ID = - 250 µA
P-Ch
- 0.4
-
- 1
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
N-Ch
-
-
± 100
nA
P-Ch
-
-
± 100
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 12 V
N-Ch
-
-
1
µA
VGS = 0 V
VDS = - 12 V
P-Ch
-
-
- 1
VGS = 0 V
VDS = 12 V, TJ = 55 °C
N-Ch
-
-
10
VGS = 0 V
VDS = - 12 V, TJ = 55 °C
P-Ch
-
-
- 10
On-State Drain Currenta
ID(on)
VGS = 4.5 V
VDS ≥ 5 V
N-Ch
15
-
-
A
VGS = - 4.5 V
VDS ≤ - 5 V
P-Ch
- 8
-
-
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V
ID = 4.2 A
N-Ch
-
0.033
0.040
Ω
VGS = - 4.5 V
ID = - 3.3 A
P-Ch
-
0.058
0.070
VGS = 2.5 V
ID = 3.8 A
N-Ch
-
0.039
0.048
VGS = - 2.5 V
ID = - 2.8 A
P-Ch
-
0.082
0.100
VGS = 1.8 V
ID = 1.6 A
N-Ch
-
0.051
0.063
VGS = - 1.8 V
ID = - 0.7 A
P-Ch
-
0.111
0.140
Forward Transconductancea
gfs
VDS = 10 V, ID = 4.2 A
N-Ch
-
13
-
S
VDS = - 10 V, ID = - 3.3 A
P-Ch
-
9
-
Dynamicb
Input Capacitance
Ciss
VGS = 0 V
N-Channel
VDS = 6 V, f = 1 MHz
P-Channel
VDS = - 6 V, f = 1 MHz
N-Ch
-
400
-
pF
P-Ch
-
400
-
Output Capacitance
Coss
N-Ch
-
120
-
P-Ch
-
140
-
Reverse Transfer Capacitance
Crss
N-Ch
-
70
-
P-Ch
-
100
-


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