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SM8A27HE3-2D Datasheet(PDF) 1 Page - Vishay Siliconix |
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SM8A27HE3-2D Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Document Number: 88386 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 09-Feb-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions SM8A27 Vishay General Semiconductor FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology •TJ = 175 °C capability suitable for high reliability and automotive requirement • Low leakage current • Low forward voltage drop • High surge capability • Meets ISO7637-2 surge specification • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. MECHANICAL DATA Case: DO-218AB Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: Heatsink is anode PRIMARY CHARACTERISTICS VBR 27 V PPPM (10 x 1000 μs) 6600 W PD 8 W IRSM 130 A IFSM 700 A TJ max. 175 °C DO-218AB MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with 10/1000 μs waveform PPPM 6600 W Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) PD 8.0 W Non-repetitive peak reverse surge current for 10 μs/10 ms exponentially decaying waveform IRSM 130 A Maximum working stand-off voltage VWM 22.0 V Peak forward surge current 8.3 ms single half sine-wave IFSM 700 A Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C |
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