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2SD878 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD878 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD878 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·High Power Dissipation ·High Current Capability APPLICATIONS ·High power amplifier applications. ·High power switching applications. ·DC-DC converter applications. ·Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB B Base Current-Continuous 7 A PC Collector Power Dissipation @TC=25℃ 115 W Tj Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc Website:www.iscsemi.cn |
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