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2SD878 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD878 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD878 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.1 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V 1.8 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 4A; VCE= 4V 20 70 hFE-2 DC Current Gain IC= 10A; VCE= 4V 5 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 150 pF fT Current-Gain—Bandwidth Product IC= 1A; VCE= 4V 1.5 MHz Switching Times ton Turn-on Time 2.5 μs tstg Storage Time 3.5 tf Fall Time VCC= 50V, RL= 10Ω,IB1= -IB2= 0.5A 1.2 isc Website:www.iscsemi.cn |
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