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SIZ710DT-T1-GE3 Datasheet(PDF) 9 Page - Vishay Siliconix |
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SIZ710DT-T1-GE3 Datasheet(HTML) 9 Page - Vishay Siliconix |
9 / 14 page Document Number: 65733 S10-2248-Rev. A, 04-Oct-10 www.vishay.com 9 Vishay Siliconix SiZ710DT New Product CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 10 1 100 TJ = 25 °C TJ =150 °C VSD - Source-to-Drain Voltage (V) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Single Pulse Power 0.000 0.002 0.004 0.006 0.008 0.010 0.012 02 4 6 8 10 TJ =25 °C ID =20A TJ = 125 °C VGS - Gate-to-Source Voltage (V) 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 Time (s) Safe Operating Area, Junction-to-Ambient 0.01 100 1 100 0.01 0.1 1ms 10 s 10 ms 0.1 1 10 10 TA = 25 °C Single Pulse 100 μs DC BVDSS Limited 1s 100 ms Limited by RDS(on)* VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified |
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