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SIZ704DT-T1-GE3 Datasheet(PDF) 9 Page - Vishay Siliconix |
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SIZ704DT-T1-GE3 Datasheet(HTML) 9 Page - Vishay Siliconix |
9 / 12 page Document Number: 65367 S09-1921-Rev. A, 28-Sep-09 www.vishay.com 9 Vishay Siliconix SiZ704DT New Product CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD -Source-to-Drain Voltage (V) 1 0.01 0.001 0.1 10 100 TJ = 150 °C TJ = 25 °C - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) ID =5mA On-Resistance vs. Gate-to-Source Single Pulse Power 0.00 0.01 0.02 0.03 0.04 0.05 0.06 012 3 45 67 8 910 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID =10A 0 10 20 30 40 50 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 ms Limited byRDS(on)* BVDSS Limited 1ms 10 ms 1s 10 s DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 µs |
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