SIZ704DT-T1-GE3 datasheet(9/12 Pages) VISHAY

Part #	SIZ704DT-T1-GE3

Description	N-Channel 30-V (D-S) MOSFETs

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Manufacturer	VISHAY [Vishay Siliconix]

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9 / 12 page

Document Number: 65367

S09-1921-Rev. A, 28-Sep-09

www.vishay.com

9

Vishay Siliconix

SiZ704DT

New Product

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD -Source-to-Drain Voltage (V)

1

0.01

0.001

0.1

10

100

TJ = 150 °C

TJ = 25 °C

- 0.8

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

ID =5mA

On-Resistance vs. Gate-to-Source

Single Pulse Power

0.00

0.01

0.02

0.03

0.04

0.05

0.06

012

3

45

67

8

910

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID =10A

0

10

20

30

40

50

Time (s)

10

1000

0.1

0.01

0.001

100

1

Safe Operating Area, Junction-to-Ambient

100

1

0.1

1

10

100

0.01

10

0.1

TA = 25 °C

Single Pulse

100 ms

Limited byRDS(on)*

BVDSS Limited

1ms

10 ms

1s

10 s

DC

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

100 µs

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SIZ704DT-T1-GE3 Datasheet(PDF) 9 Page - Vishay Siliconix

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