Vishay Siliconix

SiS782DN

Document Number: 67954

S11-1177-Rev. A, 13-Jun-11

www.vishay.com

1

This document is subject to change without notice.

N-Channel 30 V (D-S) MOSFET with Schottky Diode

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

and Schottky Diode

•

with Small Size and Low 1.07 mm Profile

•

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Notebook PC

- System Power, Memory

•

Buck Converter

•

Synchronous Rectifier Switch

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See solder profile (

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Package limited.

PRODUCT SUMMARY

e

30

16

9.5 nC

16

1

2

3

4

5

6

7

8

S

S

S

G

D

D

D

D

3.30 mm

3.30 mm

PowerPAK 1212-8

Bottom View

Ordering Information:

SiS782DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

S

D

Schottky Diode

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

± 20

A

Pulsed Drain Current (t = 300 µs)

50

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current

L = 0.1 mH

15

Single Pulse Avalanche Energy

11.25

mJ

Maximum Power Dissipation

41

W

26

Operating Junction and Storage Temperature Range

- 50 to 150

°C

260