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SIS776DN Datasheet(PDF) 5 Page - Vishay Siliconix |
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SIS776DN Datasheet(HTML) 5 Page - Vishay Siliconix |
5 / 14 page Document Number: 67012 S10-2251-Rev. A, 04-Oct-10 www.vishay.com 5 Vishay Siliconix SiS776DN TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Reverse Current (Schottky) 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C 10-7 10-6 10-5 10-4 10-3 10-2 10-1 0 25 50 75 100 125 150 TJ - Temperature (°C) 10 V 30 V 20 V On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0 0.01 0.02 0.03 0.04 0.05 012 345 67 89 10 ID =10A TJ =25 °C TJ = 125 °C V GS - Gate-to-Source Voltage (V) 0 30 60 90 120 150 0 1 1 1 0 0 . 0 0.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 0.01 100 1 100 0.01 0.1 10 s 10 ms 0.1 1 10 10 TA = 25 °C Single Pulse 1ms DC BVDSS Limited 1s 100 ms Limited by RDS(on)* V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified |
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