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SIS478DN-T1-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SIS478DN-T1-GE3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 13 page www.vishay.com 4 Document Number: 71693 S10-2426-Rev. A, 25-Oct-10 Vishay Siliconix SiS478DN New Product TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 ID =8A VGS =10V VGS =4.5 V T J - Junction Temperature (°C) 0 0.02 0.04 0.06 0.08 0.10 012 3 45 67 89 10 TJ =25 °C TJ = 125 °C ID =8A V GS - Gate-to-Source Voltage (V) 0 10 20 30 40 50 Time (s) 10 1000 0.1 0.01 0.001 100 1 Source-Drain Diode Forward Voltage Threshold Voltage Safe Operating Area, Junction-to-Ambient TJ = 25 °C TJ = 150 °C 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 V SD - Source-to-Drain Voltage (V) - 0.8 - 0.6 - 0.4 - 0.2 0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID =5mA ID = 250 μA T J - Temperature (°C) 0.01 100 1 100 0.01 0.1 10 s 10 ms 0.1 1 10 10 TA = 25 °C Single Pulse 1ms DC BVDSS Limited 1s 100 ms Limited by RDS(on)* V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified |
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