SIS454DN datasheet(4/13 Pages) VISHAY

Part #	SIS454DN

Description	N-Channel 20 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 66707

S10-1284-Rev. A, 31-May-10

Vishay Siliconix

SiS454DN

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

10

1

100

TJ = 25 °C

TJ = 150 °C

V

SD - Source-to-Drain Voltage (V)

0.8

1.0

1.2

1.4

1.6

1.8

2.0

- 50

- 25

0

25

50

75

100

125

150

ID = 250 μA

T

J - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power (Junction-to-Ambient)

0

0.002

0.004

0.006

0.008

0.010

02

4

6

8

10

TJ =25 °C

ID =20A

TJ = 125 °C

V

GS - Gate-to-Source Voltage (V)

0.01

0

1

40

50

10

600

Time (s)

30

20

0.1

10

100

Safe Operating Area, Junction-to-Ambient

0.01

100

1

100

0.01

0.1

10 s

10 ms

0.1

1

10

TA = 25 °C

Single Pulse

1ms

DC

BVDSS Limited

1s

100 ms

100 μs

Limited by RDS(on)*

V

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

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