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SIS454DN Datasheet(PDF) 4 Page - Vishay Siliconix |
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SIS454DN Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 13 page www.vishay.com 4 Document Number: 66707 S10-1284-Rev. A, 31-May-10 Vishay Siliconix SiS454DN TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 10 1 100 TJ = 25 °C TJ = 150 °C V SD - Source-to-Drain Voltage (V) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA T J - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0 0.002 0.004 0.006 0.008 0.010 02 4 6 8 10 TJ =25 °C ID =20A TJ = 125 °C V GS - Gate-to-Source Voltage (V) 0.01 0 1 40 50 10 600 Time (s) 30 20 0.1 10 100 Safe Operating Area, Junction-to-Ambient 0.01 100 1 100 0.01 0.1 10 s 10 ms 0.1 1 10 10 TA = 25 °C Single Pulse 1ms DC BVDSS Limited 1s 100 ms 100 μs Limited by RDS(on)* V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified |
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