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BBY51-03W Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BBY51-03W
Description  Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BBY51-03W Datasheet(HTML) 2 Page - Siemens Semiconductor Group

   
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BBY 51-03W
Semiconductor Group
2
Edition A01, 03.05.95
Electrical Characteristics
at
TA = 25
°C, unless otherwise specified.
Parameter
Symbol
Value
Unit
min.
typ.
max.
DC Characteristics
Reverse current
VR = 6 V
VR = 6 V, TA = 65 °C
IR
-
-
-
-
10
200
nA
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 4 V, f = 1 MHz
CT
4.5
3.4
2.7
2.5
5.3
4.2
3.5
3.1
6.1
5.2
4.6
3.7
pF
Capacitance ratio
VR = 1 V, 4 V, f = 1 MHz
CT1V/CT4V
1.55
1.75
2.2
-
Capacitance difference
VR = 1 V, 3 V,f = 1MHz
VR = 3 V, 4 V,f = 1MHz
C1V-C3V
C3V-C4V
1.4
0.30
1.78
0.50
2.2
0.7
pF
Series resistance
VR = 1 V, f = 1 GHz
rs
-
0.37
-
Case capacitance
f = 1 MHz
CC
-
0.12
-
pF
Serien inductance
Ls
-2
-
nH
____________________
1) Without 100 % test, correlation limits


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