SIR426DP-T1-GE3 datasheet(4/13 Pages) VISHAY

Part #	SIR426DP-T1-GE3

Description	N-Channel 40-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 65162

S09-1812-Rev. A, 14-Sep-09

Vishay Siliconix

SiR426DP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

1

0.01

0.001

0.1

10

100

TJ = 25 °C

TJ = 150 °C

- 1.0

- 0.7

- 0.4

- 0.1

0.2

0.5

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

ID =5mA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power (Junction-to-Ambient)

0.000

0.012

0.024

0.036

0.048

0.060

012

345

67

8

910

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID =15A

0

30

60

90

120

150

0

1

0

.

00.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

0.01

100

1

100

0.01

0.1

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

1ms

10 ms

100 ms

0.1

1

10

TA = 25 °C

Single Pulse

Limited byRDS(on)*

1s

DC

10 s

BVDSS

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SIR426DP-T1-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix

SIR426DP-T1-GE3 Datasheet(HTML) 4 Page - Vishay Siliconix

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