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SIR426DP-T1-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SIR426DP-T1-GE3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 13 page www.vishay.com 4 Document Number: 65162 S09-1812-Rev. A, 14-Sep-09 Vishay Siliconix SiR426DP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) ID =5mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.000 0.012 0.024 0.036 0.048 0.060 012 345 67 8 910 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID =15A 0 30 60 90 120 150 0 1 1 1 0 0 . 00.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 0.01 100 1 100 0.01 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1ms 10 ms 100 ms 0.1 1 10 10 TA = 25 °C Single Pulse Limited byRDS(on)* 1s DC 10 s BVDSS |
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