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SIR404DP-T1-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SIR404DP-T1-GE3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 13 page Document Number: 64815 S09-0873-Rev. A, 18-May-09 www.vishay.com 3 Vishay Siliconix SiR404DP New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 16 32 48 64 80 0.0 0.5 1.0 1.5 2.0 2.5 VGS =10 V thru 3 V VDS - Drain-to-Source Voltage (V) 0.0005 0.0009 0.0013 0.0017 0.0021 0.0025 016 32 48 64 80 VGS =10 V VGS =4.5 V VGS =2.5 V ID - Drain Current (A) 0 2 4 6 8 10 0 306090 120 150 ID =20A VDS =15 V VDS =10 V VDS =5 V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) Crss 0 2000 4000 6000 8000 10 000 04 8 12 16 20 Ciss Coss VDS - Drain-to-Source Voltage (V) 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 ID =20A VGS =2.5 V VGS =10 V TJ -Junction Temperature (°C) |
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