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SIR330DP Datasheet(PDF) 3 Page - Vishay Siliconix |
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SIR330DP Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 13 page Document Number: 67089 S10-2604-Rev. A, 15-Nov-10 www.vishay.com 3 Vishay Siliconix SiR330DP New Product TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 16 32 48 64 80 0.0 0.5 1.0 1.5 2.0 2.5 VGS =10 V thru 4V VGS =3V VGS =2V V DS - Drain-to-Source Voltage (V) 0.0040 0.0048 0.0056 0.0064 0.0072 0.0080 0 16324864 80 VGS =4.5 V VGS =10V I D - Drain Current (A) 0 2 4 6 8 10 0 5 10 15 20 25 ID =10A VDS =15V VDS =20V VDS =10V Q g - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0 1 234 5 TC = 125 °C TC = 25 °C TC = - 55 °C V GS - Gate-to-Source Voltage (V) Crss 0 360 720 1080 1440 1800 0 5 10 15 20 25 30 Ciss Coss V DS - Drain-to-Source Voltage (V) T J - Junction Temperature (°C) - 50 - 25 0 25 50 75 100 125 150 0.5 0.8 1.1 1.4 1.7 2.0 ID =20A VGS =4.5 V VGS =10V |
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