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BB835 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BB835
Description  Silicon Tuning Diode (Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BB835 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

   
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BB 835
Semiconductor Group
2
Diode capacitance C
T = f (VR)
f = 1 MHz.
Electrical Characteristics
at T
A = 25 °C, unless otherwise specified.
Parameter
Symbol
Value
Unit
min.
typ.
max.
DC Characteristics
Reverse current
V
R = 30 V
V
R = 30 V, T
A = 85 °C
I
R
10
200
nA
Diode capacitance
V
R = 1 V, f = 1 MHz
V
R = 28 V, f = 1 MHz
C
T
8.5
0.5
9.1
0.62
10
0.75
pF
Capacitance ratio
V
R = 1 V, 28 V,
f = 1 MHz
C
T1/CT28
13.5
14.7
Capacitance matching
V
R = 1…28 V,
f = 1 MHz
∆C
T/CT
––3
%
Series resistance
V
R = 1 V,
f = 470 MHz
r
S
2.4
Series inductance
L
S
1.4
nH


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