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BB831 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BB831
Description  Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BB831 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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BB 831
Semiconductor Group
Aug-03-1998
2
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Values
Symbol
Unit
typ.
max.
min.
DC characteristics
nA
20
Reverse current
VR = 30 V
-
IR
-
Reverse current
VR = 30 V, TA = 85 °C
-
-
IR
500
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 28 V, f = 1 MHz
CT
7.8
0.85
pF
9.8
1.2
8.8
1.02
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
8.6
-
9.5
CT1/CT28
7.8
-
3
%
-
∆C
T /CT
Capacitance matching
VR = 1 V, VR = 28 V, f = 1 MHz
Series resistance
VR = 1 V, f = 100 MHz
rs
-
-
1
-
nH
Series inductance
Ls
-
1.8
1) In-line matching. For details please refer to Application Note 047


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