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SIE878DF-T1-GE3 Datasheet(PDF) 5 Page - Vishay Siliconix

Part # SIE878DF-T1-GE3
Description  N-Channel 25-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIE878DF-T1-GE3 Datasheet(HTML) 5 Page - Vishay Siliconix

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Document Number: 65456
S09-2034-Rev. A, 05-Oct-09
www.vishay.com
5
Vishay Siliconix
SiE878DF
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
10
20
30
40
50
60
0
255075
100
125
150
TA - Ambient Temperature (°C)
Package Limited
Power Derating, Junction-to-Case
0
5
10
15
20
25
25
50
75
100
125
150
TC - Case Temperature (°C)


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