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BB811 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BB811
Description  Silicon Variable Capacitance Diode (Frequency range up to 2 GHz; special design for use in TV-sat indoor units)
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BB811 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
2
BB 811
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
typ.
Unit
Values
max.
Reverse current
VR = 30 V
VR = 30 V, TA = 85 ˚C
IR
nA
20
500
Diode capacitance, f = 1 MHz
VR =
1 V
VR = 28 V
CT
pF
7.8
0.85
8.8
1.02
9.8
1.2
Capacitance ratio
f = 1 MHz, VR = 1 V/28 V
CT1
CT28
7.8
8.6
9.5
Series resistance
f = 100 MHz, CT = 9 pF
rS
–1–
Capacitance matching
f = 1 MHz, VR = 0.5 … 28 V
CT
CT
%
––3
Case capacitance
f = 1 MHz
CC
pF
0.1
Series inductance
LS
nH
2.8
Diode capacitance CT = f (VR)
f = 1 MHz


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