SIE818DF datasheet(2/10 Pages) VISHAY

Part #	SIE818DF

Description	N-Channel 75-V (D-S) MOSFET

Download	10 Pages

Scroll/Zoom	100%

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

2 / 10 page

www.vishay.com

2

Document Number: 74485

S09-1338-Rev. B, 13-Jul-09

Vishay Siliconix

SiE818DF

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. Maximum under Steady State conditions is 68 °C/W.

c. Measured at source pin (on the side of the package).

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, b

t

≤ 10 s

RthJA

20

24

°C/W

Maximum Junction-to-Case (Drain Top)

Steady State

RthJC (Drain)

0.8

1

Maximum Junction-to-Case (Source)a, c

RthJC (Source)

2.2

2.7

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

75

V

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

78

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

- 7.1

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS , ID = 250 µA

1.5

2.1

3

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 75 V, VGS = 0 V

1

µA

VDS = 75 V, VGS = 0 V, TJ = 55 °C

10

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 10 V

25

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 16 A

0.0078

0.0095

Ω

VGS = 4.5 V, ID = 14 A

0.0103

0.0125

Forward Transconductancea

gfs

VDS = 20 V, ID = 16 A

50

S

Dynamicb

Input Capacitance

Ciss

VDS = 38 V, VGS = 0 V, f = 1 MHz

3200

pF

Output Capacitance

Coss

330

Reverse Transfer Capacitance

Crss

170

Total Gate Charge

Qg

VDS = 38 V, VGS = 10 V, ID = 16 A

63

95

nC

VDS = 38 V, VGS = 4.5 V, ID = 16 A

33

50

Gate-Source Charge

Qgs

11

Gate-Drain Charge

Qgd

17

Gate Resistance

Rg

f = 1 MHz

0.95

1.5

Ω

Turn-On Delay Time

td(on)

VDD = 38 V, RL = 3.8 Ω

ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω

30

45

ns

Rise Time

tr

150

225

Turn-Off Delay Time

td(off)

40

60

Fall Time

tf

15

25

Turn-On Delay Time

td(on)

VDD = 38 V, RL = 3.8 Ω

ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω

15

25

Rise Time

tr

15

25

Turn-Off Delay Time

td(off)

40

60

Fall Time

tf

10

15

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

60

A

Pulse Diode Forward Currenta

ISM

80

Body Diode Voltage

VSD

IS = 10 A

0.8

1.2

V

Body Diode Reverse Recovery Time

trr

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

100

150

ns

Body Diode Reverse Recovery Charge

Qrr

345

520

nC

Reverse Recovery Fall Time

ta

75

ns

Reverse Recovery Rise Time

tb

25

Similar Part No. - SIE818DF

Manufacturer	Part #	Datasheet	Description
Vishay Telefunken	SIE818DF	192Kb / 10P	N-Channel 75-V (D-S) MOSFET
Vishay Siliconix	SIE818DF-T1-E3	230Kb / 10P	N-Channel 75 V (D-S) MOSFET 01-Jan-2022
	SIE818DF-T1-GE3	230Kb / 10P	N-Channel 75 V (D-S) MOSFET 01-Jan-2022
	SIE818DF	230Kb / 10P	N-Channel 75 V (D-S) MOSFET 01-Jan-2022

More results

Similar Description - SIE818DF

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SUP90N08-6M8P	176Kb / 7P	N-Channel 75-V (D-S) MOSFET Rev. C, 16-Nov-09
	SUM90N08-6M2P	116Kb / 6P	N-Channel 75-V (D-S) MOSFET Rev. A, 03-Dec-07
	SUP90N08-6M8P	116Kb / 6P	N-Channel 75-V (D-S) MOSFET Rev. A, 03-Dec-07
	SUP90N08-4M8P	104Kb / 6P	N-Channel 75-V (D-S) MOSFET Rev. C, 06-Aug-07
	SI7812DN	551Kb / 14P	N-Channel 75-V (D-S) MOSFET Rev. D, 29-Dec-08
Analog Power	AM230N07-03B	334Kb / 5P	N-Channel 75-V (D-S) MOSFET
	AM90N07-04B	364Kb / 5P	N-Channel 75-V (D-S) MOSFET
	AM90N07-09B	336Kb / 5P	N-Channel 75-V (D-S) MOSFET
Vishay Siliconix	SUM110N08-07	51Kb / 5P	N-Channel 75-V (D-S) MOSFET Rev. C, 21-Oct-02
Vishay Siliconix	SI7174DP	513Kb / 13P	N-Channel 75-V (D-S) MOSFET Rev. A, 14-Apr-08

More results

SIE818DF Datasheet(PDF) 2 Page - Vishay Siliconix

SIE818DF Datasheet(HTML) 2 Page - Vishay Siliconix

Similar Part No. - SIE818DF

Similar Description - SIE818DF

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL