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SIE726DF-T1-E3 Datasheet(PDF) 3 Page - Vishay Siliconix

Part # SIE726DF-T1-E3
Description  N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIE726DF-T1-E3 Datasheet(HTML) 3 Page - Vishay Siliconix

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Document Number: 68626
S09-1338-Rev. B, 13-Jul-09
www.vishay.com
3
Vishay Siliconix
SiE726DF
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
10
20
30
40
50
60
0.0
0.2
0.4
0.6
0.8
1.0
VDS - Drain-to-Source Voltage (V)
VGS = 10 V thru 4 V
VGS =3 V
VGS =2 V
0.000
0.001
0.002
0.003
0.004
020
40
60
I
D -- Drain Current (A)
V
GS =10 V
V
GS =4.5 V
0
2
4
6
8
10
0
25
50
75
100
125
I
D =20A
Qg - Total Gate Charge (nC)
V
DS =24 V
V
DS =15 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
012
3
4
VGS - Gate-to-Source Voltage (V)
TC =25 °C
TC = 125 °C
TC = - 55 °C
Crss
0
2000
4000
6000
8000
10 000
0
5
10
15
20
25
30
Ciss
VDS - Drain-to-Source Voltage (V)
Coss
T
J - Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50
- 25
0
25
50
75
100
125
150
VGS =10 V
ID =25A
VGS =4.5 V


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