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SIE726DF-T1-E3 Datasheet(PDF) 1 Page - Vishay Siliconix

Part # SIE726DF-T1-E3
Description  N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIE726DF-T1-E3 Datasheet(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
SiE726DF
New Product
Document Number: 68626
S09-1338-Rev. B, 13-Jul-09
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
e
ID (A)
a
Qg (Typ.)
Silicon
Limit
Package
Limit
30
0.0024 at VGS = 10 V
175
60
50 nC
0.0033 at VGS = 4.5 V
149
60
Package Drawing
www.vishay.com/doc?72945
Ordering Information: SiE726DF-T1-E3 (Lead (Pb)-free)
SiE726DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
Bottom View
Top surface is connected to pins 1, 5, 6, and 10
PolarPAK
10
D
S
S
G
D
D
S
S
G
D
1
43
2
5
67
8
9
D
DS
G
D
5
4
3
2
1
6
7
8
9
10
For Related Documents
www.vishay.com/ppg?68626
N-Channel MOSFET
G
S
D
Schottky Diode
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
www.vishay.com/ppg?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
175 (Silicon Limit)
A
60a (Package Limit)
TC = 70 °C
60a
TA = 25 °C
35b, c
TA = 70 °C
28b, c
Pulsed Drain Current
IDM
80
Continuous Source-Drain Diode Current
TC = 25 °C
IS
60a
TA = 25 °C
4.3b, c
Single Pulse Avalanche Current
L = 0.1 mH
IAS
50
Avalanche Energy
EAS
125
mJ
Maximum Power Dissipation
TC = 25 °C
PD
125
W
TC = 70 °C
80
TA = 25 °C
5.2b, c
TA = 70 °C
3.3b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
SkyFET™ Monolithic TrenchFET®
Power MOSFET and Schottky Diode
Ultra Low Thermal Resistance Using Top-
Exposed PolarPAK® Package for Double-
Sided Cooling
Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size
Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
100 % Rg and UIS Tested
Compliant to RoHS directive 2002/95/EC
APPLICATIONS
Synchronous Rectification
DC/DC
Low-Side Switch


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