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SIB900EDK-T1-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SIB900EDK-T1-GE3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 64808 S09-0667-Rev. A, 20-Apr-09 Vishay Siliconix SiB900EDK New Product TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Normalized On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 - 50 - 25 0 25 50 75 100 125 150 VGS =1.5 V;ID =0.4 A VGS =4.5 V,2.5 V,1.8V;ID =1.6 A TJ -Junction Temperature (°C) 0.0 0.2 0.4 0.6 0.8 1.0 01 2 3 45 TJ = 25 °C TJ = 125 °C ID =1.6 A VGS - Gate-to-Source Voltage (V) 0.4 0.5 0.6 0.7 0.8 0.9 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) Source-Drain Diode Forward Voltage Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C TJ = 25 °C VSD -Source-to-Drain Voltage (V) 0 2 4 6 8 Time (s) 10 1000 0.1 0.01 0.001 100 1 10 0.1 0.1 1 10 1 TA = 25 °C Single Pulse 1ms 0.01 10 ms 100 ms 1s,10s DC BVDSS Limited 100 100 µs Limited byRDS(on)* VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified |
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