SIA920DJ-T1-GE3 datasheet(5/7 Pages) VISHAY

Part #	SIA920DJ-T1-GE3

Description	Dual N-Channel 8 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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5 / 7 page

Document Number: 63299

S11-1381-Rev. A, 11-Jul-11

www.vishay.com

5

Vishay Siliconix

SiA920DJ

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

3

6

9

12

15

0

25

50

75

100

125

150

T

C - Case Temperature (°C)

Package Limited

Power Derating

0

2

4

6

8

25

50

75

100

125

150

TC - Case Temperature (°C)

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SIA920DJ-T1-GE3 Datasheet(PDF) 5 Page - Vishay Siliconix

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