SI9926CDY-T1-GE3 datasheet(3/10 Pages) VISHAY

Part #	SI9926CDY-T1-GE3

Description	Dual N-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 68606

S09-0704-Rev. B, 27-Apr-09

www.vishay.com

3

Vishay Siliconix

Si9926CDY

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

6

12

18

24

30

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VDS - Drain-to-Source Voltage (V)

VGS = 5 V thru 2.5 V

VGS = 1.5 V

VGS = 2 V

VGS = 1 V

0.010

0.012

0.014

0.016

0.018

0.020

0.022

0

6

12

18

24

30

ID - Drain Current (A)

VGS = 2.5 V

VGS = 4.5 V

0

2

4

6

8

10

0

5

10

15

20

25

ID = 8.3 A

Qg - Total Gate Charge (nC)

VDS = 16 V

VDS = 10 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0.0

0.5

1.0

1.5

2.0

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

Crss

0

300

600

900

1200

1500

0

5

10

15

20

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

TJ - Junction Temperature (°C)

VGS = 4.5 V, 2.5 V

ID = 8.3 A

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