SI7794DP datasheet(3/13 Pages) VISHAY

Part #	SI7794DP

Description	N-Channel 30 V (D-S) MOSFET with Schottky Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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3 / 13 page

Document Number: 67692

S11-1150-Rev. A, 13-Jun-11

www.vishay.com

3

Vishay Siliconix

Si7794DP

New Product

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

16

32

48

64

80

0.0

0.5

1.0

1.5

2.0

2.5

V

DS - Drain-to-Source Voltage (V)

V

GS = 10 V thru 3 V

V

GS = 2 V

0.0020

0.0024

0.0028

0.0032

0.0036

0.0040

0

16

32

48

64

80

I

D - Drain Current (A)

V

GS = 4.5 V

V

GS = 10 V

0

2

4

6

8

10

0

10

20

30

40

50

Q

g - Total Gate Charge (nC)

I

D = 10 A

V

DS = 10 V

V

DS = 15 V

V

DS = 20 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0

0.8

1.6

2.4

3.2

4.0

V

GS - Gate-to-Source Voltage (V)

T

C = 125 °C

T

C = 25 °C

T

C = - 55 °C

0

640

1280

1920

2560

3200

0

6

12

18

24

30

V

DS - Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

25

50

75

100

125

150

T

J - Junction Temperature (°C)

I

D = 20 A

V

GS = 4.5 V

V

GS = 10 V

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