SI7629DN-T1-GE3 datasheet(3/13 Pages) VISHAY

Part #	SI7629DN-T1-GE3

Description	P-Channel 20 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 70556

S10-1538-Rev. A, 19-Jul-10

www.vishay.com

3

Vishay Siliconix

Si7629DN

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

16

32

48

64

80

0.0

0.5

1.0

1.5

2.0

2.5

VGS =10 V thru 3V

VGS =2V

V

DS - Drain-to-Source Voltage (V)

0.000

0.004

0.008

0.012

0.016

0.020

0

16324864

80

VGS =10V

VGS =2.5 V

VGS =4.5 V

I

D - Drain Current (A)

0

2

4

6

8

10

0

255075

100

125

ID =10A

VDS =10V

VDS =20V

VDS =15V

Q

g - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0.0

0.6

1.2

1.8

2.4

3.0

TC = 25 °C

TC = 125 °C

TC = - 55 °C

V

GS - Gate-to-Source Voltage (V)

0

1700

3400

5100

6800

8500

0

5

10

15

20

Ciss

Crss

Coss

V

DS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

ID =20A

VGS =10V

VGS =2.5 V

T

J - Junction Temperature (°C)

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SI7629DN-T1-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix

SI7629DN-T1-GE3 Datasheet(HTML) 3 Page - Vishay Siliconix

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