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SI7489DP Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7489DP Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page 2 Vishay Siliconix SPICE Device Model Si7489DP www.vishay.com Document Number: 73467 S-51549 ⎯Rev. A, 22-Aug-05 SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 μA 1.9 V On-State Drain Current a ID(on) VDS = −5 V, VGS = −10 V 146 A VGS = −10 V, ID = −7.8 A 0.034 0.033 Drain-Source On-State Resistance a rDS(on) VGS = −4.5 V, ID = −7.3 A 0.038 0.038 Ω Forward Transconductance a gfs VDS = −15 V, ID = −7.8 A 24 38 S Diode Forward Voltage a VSD IS = −6.2 A −0.85 −0.80 V Dynamic b Input Capacitance Ciss 5013 4600 Output Capacitance Coss 246 230 Reverse Transfer Capacitance Crss VDS = −50 V, VGS = 0 V, f = 1 MHz 177 175 pF VDS = −50 V, VGS = −10 V, ID = −7.8 A 100 106 Total Gate Charge Qg 54 54 Gate-Source Charge Qgs 14 14 Gate-Drain Charge Qgd VDS = −50 V, VGS = −4.5 V, ID = −7.8 A 26 26 nC Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. |
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