SI7270DP-T1-GE3 datasheet(1/13 Pages) VISHAY

Part #	SI7270DP-T1-GE3

Description	Dual N-Channel 30 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si7270DP

New Product

Document Number: 66817

S10-2010-Rev. A, 06-Sep-10

www.vishay.com

1

Dual N-Channel 30 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET® Power MOSFET

• PWM Optimized

• 100 % Rg Tested

• 100 % UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Fixed Telecom

- Server

•

Synchronous Converter

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Maximum under steady state conditions is 80 °C/W.

f. Package limited.

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

f

Qg (Typ.)

30

0.021 at VGS = 10 V

8

6.6

0.025 at VGS = 4.5 V

8

Ordering Information: Si7270DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S1

G1

S2

G2

D1

D2

6.15 mm

5.15 mm

Bottom View

PowerPAK® SO-8

D1

G1

S1

N-Channel MOSFET

D2

G2

S2

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

8f

A

TC = 70 °C

8f

TA = 25 °C

8 a, b, f

TA = 70 °C

8a, b

Pulsed Drain Current (300 µs)

IDM

35

Source-Drain Current Diode Current

TC = 25 °C

IS

8f

TA = 25 °C

3.0a, b

Single Pulse Avalanche Current

L = 0.1 mH

IAS

15

Avalanche Energy

EAS

11.2

mJ

Maximum Power Dissipation

TC = 25 °C

PD

17.8

W

TC = 70 °C

11.4

TA = 25 °C

3.6a, b

TA = 70 °C

2.3a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)c, d

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typ.

Max.

Unit

Maximum Junction-to-Ambienta, e

t

≤ 10 s

RthJA

28

35

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

5.5

7.0

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SI7270DP-T1-GE3 Datasheet(PDF) 1 Page - Vishay Siliconix

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