SI7137DP-T1-GE3 datasheet(1/13 Pages) VISHAY

Part #	SI7137DP-T1-GE3

Description	P-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si7137DP

New Product

Document Number: 69063

S09-0865-Rev. D, 18-May-09

www.vishay.com

1

P-Channel 20-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET® Gen III P-Channel Power MOSFET

•

100 % Rg Tested

•

100 % UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Adaptor Switch

•

Battery Switch

•

Load Switch

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

Qg (Typ.)

- 20

0.00195 at VGS = - 10 V

- 60d

183 nC

0.0025 at VGS = - 4.5 V

- 60d

0.0039 at VGS = - 2.5 V

- 60d

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 54 °C/W.

d. Package limited.

e. See Solder Profile

(www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 60d

A

TC = 70 °C

- 60d

TA = 25 °C

- 42a, b

TA = 70 °C

- 33.7a, b

Pulsed Drain Current

IDM

- 100

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 60d

TA = 25 °C

- 5.6a, b

Avalanche Current

L = 0.1 mH

IAS

- 50

Single-Pulse Avalanche Energy

EAS

125

mJ

Maximum Power Dissipation

TC = 25 °C

PD

104

W

TC = 70 °C

66.6

TA = 25 °C

6.25a, b

TA = 70 °C

4.0a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)e, f

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, c

t

≤ 10 s

RthJA

15

20

°C/W

Maximum Junction-to-Case

Steady State

RthJC

0.9

1.2

Ordering Information: Si7137DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

S

G

D

P-Channel MOSFET

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