SI4931DY_05 datasheet(2/4 Pages) VISHAY

Part #	SI4931DY

Description	Dual P-Channel 12-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SPICE Device Model Si4931DY

www.vishay.com

Document Number: 72553

S-52446

Rev. B, 28-Nov-05

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −350 µA

0.82

V

On-State Drain Current

a

ID(on)

VDS = −5 V, VGS = −4.5 V

375

A

VGS = −4.5 V, ID = −8.9 A

0.015

VGS = −2.5 V, ID = −8.1 A

0.019

0.018

Drain-Source On-State Resistance

a

rDS(on)

VGS = −1.8 V, ID = −3.6 A

0.027

0.023

Ω

Forward Transconductance

a

gfs

VDS = −6 V, ID = −8.9 A

37

26

S

Diode Forward Voltage

a

VSD

IS = −1.7 A, VGS = 0 V

−0.80

−0.70

V

Dynamic

b

Total Gate Charge

Qg

30

34.5

Gate-Source Charge

Qgs

5.1

Gate-Drain Charge

Qgd

VDS = −6 V, VGS = −4.5 V, ID = −8.9 A

9.6

nC

Turn-On Delay Time

td(on)

31

25

Rise Time

tr

33

46

Turn-Off Delay Time

td(off)

244

230

Fall Time

tf

VDD = −6 V, RL = 6 Ω

ID ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω

59

155

ns

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

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