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Document Number: 70341

S09-0540-Rev. B, 06-Apr-09

Vishay Siliconix

Si4866BDY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1

0.01

0.001

0.1

10

100

25 °C

150 °C

- 0.5

- 0.3

- 0.1

0.1

0.3

- 50

- 25

0

25

50

75

100

125

150

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.000

0.004

0.008

0.012

0.016

0.020

012345

25 °C

125 °C

0.001

0

1

200

80

120

10

0.01

Time (s)

40

160

0.1

Safe Operating Area, Junction-to-Ambient

0.01

100

1

100

0.01

0.1

1 ms

10 ms

100 ms

DC

10 s

0.1

1

10

10

Single Pulse

1 s