SI4838BDY-T1-GE3 datasheet(2/10 Pages) VISHAY

Part #	SI4838BDY-T1-GE3

Description	N-Channel 12-V (D-S) MOSFET

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Document Number: 68964

S-82662-Rev. A, 03-Nov-08

Vishay Siliconix

Si4838BDY

New Product

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

12

V

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

12

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

- 3.2

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.4

1.0

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 12 V, VGS = 0 V

1

µA

VDS = 12 V, VGS = 0 V, TJ = 55 °C

10

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 4.5 V

30

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 4.5 V, ID = 15 A

0.0021

0.0027

Ω

VGS = 2.5 V, ID = 12 A

0.0025

0.0032

VGS = 1.8 V, ID = 10 A

0.0031

0.0040

Forward Transconductancea

gfs

VDS = 15 V, ID = 15 A

105

S

Dynamicb

Input Capacitance

Ciss

VDS = 6 V, VGS = 0 V, f = 1 MHz

5760

pF

Output Capacitance

Coss

1730

Reverse Transfer Capacitance

Crss

1145

Total Gate Charge

Qg

VDS = 6 V, VGS = 4.5 V, ID = 10 A

56

84

nC

VDS = 6 V, VGS = 2.5 V, ID = 10 A

33

50

Gate-Source Charge

Qgs

5.9

Gate-Drain Charge

Qgd

12.5

Gate Resistance

Rg

f = 1 MHz

0.2

0.65

1.3

Ω

Turn-On Delay Time

td(on)

VDD = 6 V, RL = 0.6 Ω

ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω

25

50

ns

Rise Time

tr

29

55

Turn-Off Delay Time

td(off)

140

240

Fall Time

tf

35

65

Turn-On Delay Time

td(on)

VDD = 6 V, RL = 0.6 Ω

ID ≅ 10 A, VGEN = 8 V, Rg = 1 Ω

12

24

Rise Time

tr

13

26

Turn-Off Delay Time

td(off)

56

100

Fall Time

tf

10

20

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

5.1

A

Pulse Diode Forward Currenta

ISM

70

Body Diode Voltage

VSD

IS = 3 A

0.60

1.1

V

Body Diode Reverse Recovery Time

trr

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

52

100

ns

Body Diode Reverse Recovery Charge

Qrr

40

80

nC

Reverse Recovery Fall Time

ta

21

ns

Reverse Recovery Rise Time

tb

31

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