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SI4816BDY-T1-E3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI4816BDY-T1-E3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 13 page Vishay Siliconix Si4816BDY Document Number: 73026 S09-0394-Rev. D, 09-Mar-09 www.vishay.com 1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES • Halogen-free According to IEC 61249-2-21 Available • LITTLE FOOT® Plus Power MOSFET • 100 % Rg Tested PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) Channel-1 30 0.0185 at VGS = 10 V 6.8 7.8 0.0225 at VGS = 4.5 V 6.0 Channel-2 0.0115 at VGS = 10 V 11.4 11.6 0.016 at VGS = 4.5 V 9.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V at 1.0 A 2.0 G1 D1 A/S2 D2/S1 A/S2 D2/S1 G2 D2/S1 SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4816BDY-T1-E3 (Lead (Pb)-free) Si4816BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) G2 S2 N-Channel 2 MOSFET Schottky Diode A G1 D1 N-Channel 1 MOSFET S1/D2 Notes: a. Surface Mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Channel-1 Channel-2 Unit 10 s Steady State 10 s Steady State Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 6.8 5.8 11.4 8.2 A TA = 70 °C 5.5 4.6 9.0 6.5 Pulsed Drain Current IDM 30 40 Continuous Source Current (Diode Conduction)a IS 1 0.9 2.2 1.15 Single Pulse Avalanche Current L = 0.1 mH IAS 10 20 Avalanche Energy EAS 520 mJ Maximum Power Dissipationa TA = 25 °C PD 1.4 1.0 2.4 1.25 W TA = 70 °C 0.9 0.64 1.5 0.8 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Channel-1 Channel-2 Schottky Unit Typ. Max. Typ. Max. Typ. Max. Maximum Junction-to-Ambienta t ≤ 10 s RthJA 72 90 43 53 48 60 °C/W Steady State 100 125 82 100 80 100 Maximum Junction-to-Foot (Drain) Steady State RthJF 51 63 25 30 28 35 |
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