SI4618DY_09 datasheet(8/15 Pages) VISHAY

Part #	SI4618DY

Description	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Document Number: 74450

S09-2109-Rev. B, 12-Oct-09

Vishay Siliconix

Si4618DY

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

10

20

30

40

50

0.0

0.6

1.2

1.8

2.4

3.0

VDS - Drain-to-Source Voltage (V)

VGS = 10 V thru 5 V

3 V

0.007

0.008

0.009

0.010

0.011

0.012

0

10203040

50

ID - Drain Current (A)

VGS = 10 V

VGS = 4.5 V

0

2

4

6

8

10

09

18

27

36

45

Qg - Total Gate Charge (nC)

ID = 8 A

VDS

VDS = 20 V

VDS = 30 V

= 10 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

VGS - Gate-to-Source Voltage (V)

0

1

2

3

4

5

0

1234

5

TC = 25 °C

TC = - 55 °C

TC = 125 °C

Crss

VDS - Drain-to-Source Voltage (V)

0

560

1120

1680

2240

2800

06

12

18

24

30

Coss

Ciss

TJ - Junction Temperature (°C)

0.6

0.9

1.2

1.5

1.8

- 50

- 25

0

25

50

75

100

125

150

ID = 8 A

VGS = 4.5 V

VGS = 10 V

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SI4618DY Datasheet(PDF) 8 Page - Vishay Siliconix

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