SI4436DY-T1-E3 datasheet(3/10 Pages) VISHAY

Part #	SI4436DY-T1-E3

Description	N-Channel 60-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 73664

S09-0322-Rev. B, 02-Mar-09

www.vishay.com

3

Vishay Siliconix

Si4436DY

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

5

10

15

20

25

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

VDS - Drain-to-Source Voltage (V)

VGS = 3 V

VGS = 10 V thru 4 V

0

5

10

15

20

25

ID - Drain Current (A)

0.024

0.028

0.032

0.036

0.040

VGS = 4.5 V

VGS = 10 V

0

2

4

6

8

10

0

5

10

15

20

25

ID = 4.6 A

Qg - Total Gate Charge (nC)

VDS = 30 V

VDS = 48 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

4

5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

VGS - Gate-to-Source Voltage (V)

ID = 125 °C

ID = 25 °C

TC = – 55 °C

Crss

0

300

600

900

1200

1500

0

102030405060

VDS - Drain-to-Source Voltage (V)

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

- 50

- 25

0

25

50

75

100

125

150

TJ - Junction Temperature (°C)

VGS = 10 V,

ID = 4.6 A

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SI4436DY-T1-E3 Datasheet(PDF) 3 Page - Vishay Siliconix

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