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SI4394DY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4394DY Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model Si4394DY SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.96 V On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 10 V 735 A VGS = 10 V, ID = 15 A 0.0066 0.0066 Drain-Source On-State Resistance a rDS(on) VGS = 4.5 V, ID = 14 A 0.0079 0.0077 Ω Forward Transconductance a gfs VDS = 15 V, ID = 15 A 48 65 S Forward Voltage a VSD IS = 2.9 A, VGS = 0 V 0.83 0.73 V Dynamic b Total Gate Charge Qg 12.6 12.5 Gate-Source Charge Qgs 3.9 3.9 Gate-Drain Charge Qgd VDS = 15 V, VGS = 4.5 V, ID = 15 A 2.1 2.1 nC Turn-On Delay Time td(on) 12 13 Rise Time tr 7 8 Turn-Off Delay Time td(off) 48 48 Fall Time tf VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω 24 13 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 72764 S-51095 Rev. B, 13-Jun-05 |
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