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SI4340DDY Datasheet(PDF) 9 Page - Vishay Siliconix |
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SI4340DDY Datasheet(HTML) 9 Page - Vishay Siliconix |
9 / 15 page Document Number: 67583 S11-0860-Rev. A, 02-Mar-11 www.vishay.com 9 Vishay Siliconix Si4340DDY This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Reverse Current vs. Junction Temperature 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 1.E-08 1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 - 50 - 25 0 255075 100 125 150 T J -Temperature (°C) 16V 20V On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.000 0.006 0.012 0.018 0.024 0.030 02468 10 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 15.2 A 0 16 32 48 64 80 0.001 0.01 0.1 1 10 Time (s) Safe Operating Area, Junction-to-Ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 100 μs 100 ms Limited by R DS(on)* 1 ms I DM Limited T C = 25 °C Single Pulse BVDSS Limited 10 ms 10 s 1 s DC I D Limited |
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