BAT65 datasheet(2/4 Pages) SIEMENS

Part #	BAT65

Description	Silicon Schottky Diode (Low-power Schottky rectifier diode)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 4 page

BAT 65

Semiconductor Group

2

Thermal Resistance

Parameter

Symbol

Limit Values

Unit

Junction - soldering point

R

thJS

≤ 80

K/W

Junction to ambient1)

R

thJA

≤ 150

K/W

1)

Package mounted on epoxy PCB 40 mm

× 40 mm × 1.5 mm/6 cm2 Cu.

Electrical Characteristics

T

A = 25 °C, unless otherwise specified.

Parameter

Symbol

Limit Values

Unit

min.

typ.

max.

Reverse current

V

R = 30 V

V

R = 30 V, TA = 65 °C

I

R

–

50

900

µA

Forward voltage

I

F = 10 mA

I

F = 100 mA

I

F = 250 mA

I

F = 750 mA

V

F

–

0.305

0.38

0.44

0.580

0.40

–

0.70

–

V

Diode capacitance

V

R = 10 V, f = 1 MHz

C

T

–

8.4

12

pF

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BAT65 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

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