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SI4108DY-T1-GE3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI4108DY-T1-GE3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si4108DY New Product Document Number: 68635 S-81195-Rev. A, 26-May-08 www.vishay.com 1 N-Channel 75-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • Primary Side Switch • Half Bridge • Intermediate Bus Converter PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) 75 0.0098 at VGS = 10 V 20.5 36 nC S S D D D S G D SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4108DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G D S Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 80 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 75 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 20.5 A TC = 70 °C 16.4 TA = 25 °C 13.8b, c TA = 70 °C 11.1b, c Pulsed Drain Current IDM 60 Continuous Source-Drain Diode Current TC = 25 °C IS 6.5 TA = 25 °C 3b, c Single Pulse Avalanche Current L = 0.1 mH IAS 32 Single Pulse Avalanche Energy EAS 51.2 mJ Maximum Power Dissipation TC = 25 °C PD 7.8 W TC = 70 °C 5 TA = 25 °C 3.6b, c TA = 70 °C 2.3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 29 35 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 13 16 RoHS COMPLIANT |
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